Light emitting device package

ABSTRACT

A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body comprising a cavity at an upper portion; a first and second metal layers on the cavity of the package body; an open area recessed in the cavity; a first metal plate disposed in the open area and spaced apart from the first and second metal layers; a semiconductor device disposed on the first metal plate and electrically connected to at least one of the first and the second metal layers; and a resin material in the cavity.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of application Ser. No.12/647,881, filed on Dec. 28, 2009 now U.S. Pat. No. 8,227,824, andclaims priority under 35 U.S.C. 119 to Korean Patent. Application No.10-2008-0135988 filed on Dec. 29, 2008, each of which is herebyincorporated by reference in its entirety.

BACKGROUND

Embodiments of the invention relate to a light emitting device package.

A light emitting diode (LED) may constitute a light emitting source, andmay use compound semiconductor materials such as GaAs-based materials,AlGaAs-based materials, GaN-based materials, InGaN-based materials andInGaAlP-based materials.

Such an LED is packaged, and thereby is being used as a light emittingdevice for emitting various color lights. The light emitting device isbeing used as a light source in various fields, for example, lightingdisplay devices, character display devices and image display devices.

SUMMARY

Embodiments of the invention provide a light emitting device package inwhich a thermal resistance is improved.

Embodiments of the invention provide a light emitting device package inwhich a heat-radiating path of a light emitting device is improved.

An embodiment of the invention provides a light emitting device packageincluding a package body comprising a cavity at an upper portion; afirst and second metal layers on the cavity of the package body; an openarea recessed in the cavity; a first metal plate disposed in the openarea and spaced apart from the first and second metal layers; asemiconductor device disposed on the first metal plate and electricallyconnected to at least one of the first and the second metal layers; anda resin material in the cavity, wherein the first metal plate isdisposed between the package body and the semiconductor device.

An embodiment of the invention provides a light emitting device packageincluding a package body having a cavity; a plurality of metal layersdisposed on the package body; an insulating layer disposed between theplurality of metal layers and the package body; at least one well formedin the package body; a light emitting device disposed on the packagebody in the cavity; and a first metal plate disposed under the packagebody at a region corresponding to the light emitting device

An embodiment of the invention provides a light emitting device packageincluding a package body having a cavity, and formed of a siliconmaterial; at least one light emitting device disposed in the cavity ofthe package body; and a first metal plate disposed at a regioncorresponding to a region of the light emitting device at an undersurface of the package body.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features willbe apparent from the description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage according to a first embodiment.

FIGS. 2A and 2B are diagrams respectively illustrating a heat-radiatingpath and a heat-radiating resistor corresponding to the light emittingdevice package in FIG. 1.

FIG. 3 is a circuit diagram illustrating an example of the equivalentcircuit of the light emitting device package in FIG. 1.

FIG. 4 is a circuit diagram illustrating another example of theequivalent circuit of the light emitting device package in FIG. 1.

FIGS. 5 to 11 are diagrams illustrating a method for manufacturing thelight emitting device package in FIG. 1.

FIG. 12 is a side-sectional view illustrating a light emitting devicepackage according to a second embodiment.

FIGS. 13A and 13B are diagrams respectively illustrating aheat-radiating path and a heat-radiating resistor corresponding to thelight emitting device package in FIG. 12.

FIG. 14 is a side-sectional view illustrating a light emitting devicepackage according to a third embodiment.

FIGS. 15A, 15B and 15C are diagrams respectively illustrating aheat-radiating path, a heat-radiating resistor and a circuitconfiguration corresponding to the light emitting device package in FIG.14.

FIG. 16 is a side-sectional view illustrating a light emitting devicepackage according to a fourth embodiment.

FIGS. 17A, 17B and 17C are diagrams respectively illustrating aheat-radiating path, a heat-radiating resistor and a circuitconfiguration corresponding to the light emitting device package in FIG.16.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. In description of embodiments, the ‘on’ or ‘under’ of eachlayer may be described with reference to the accompanying drawings, andthe thickness of the each layer will also be described as an example andis not limited to the thickness of the accompanying drawings.

In the description of embodiments, it will be understood that when alayer (or film), region, pattern or structure is referred to as being‘on’ or ‘under’ another layer (or film), region, pad or pattern, theterminology of ‘on’ and ‘under’ includes both the meanings of ‘directly’and ‘indirectly’. Further, the reference about ‘on’ and ‘under’ eachlayer will be made on the basis of drawings. Also, the thickness of eachlayer in the drawings is an example, and is not limited thereto.

FIG. 1 is a cross-sectional view illustrating a light emitting devicepackage according to a first embodiment. Referring to FIG. 1, a lightemitting device package 100 includes a package body 110, insulatinglayers 120 and 121, a plurality of wells (or doped regions) 131 to 134,first and second metal layers 140 and 141, a metal plate 145, and alight emitting device 150.

The package body 110 may be formed with a conductive substrate or aWafer Level Package (WLP) using a silicon material. A cavity 111 havinga certain depth is formed at the upper portion of the package body 110.The cavity 111 may be formed as any one of a concave base tube shape, aconcave polygonal shape and a concave circular shape. Other shapes arewithin the scope of the invention.

The side surface of the cavity 111 of the package body 110 may be formedto be inclined, to be vertical at a certain angle, to have a certaincurvature, or to have a step, for example. The perimeter of the top ofthe package body 110 may be formed to be flat, and the outside surfacesof the package body 110 may be formed to be bent at a certain angle,formed to be inclined, to be vertical at a certain angle, to have acertain curvature, or to have a step, for example.

The insulating layers 120 and 121 are formed on a surface of the packagebody 110. The insulating layers 120 and 121 may be formed of at leastone of insulating material or dielectric materials such as siliconthermal oxide, silicon carbide (SiC), aluminum nitride (AlN), aluminaand silicon nitride. Herein, the insulating layers 120 and 121 may beformed of the silicon thermal oxide for forming a Zener diode structurein the package body 110.

In the package body 110, the region between the cavity 111 and the rearsurface of the package body 110 may be formed to have a minimumthickness. The thickness between the bottom of the cavity 111 and therear surface of the package body 110, for example, is about 500 um toabout 2000 um. The thickness may be altered according to heat transferefficiency without causing the breakage of a silicon wafer.

In the first insulating layer 120, a 1Ath insulating layer 122 and a1Bth insulating layer 124 are integrally formed on an inclined side ofthe package body 110 in the cavity 111 and an inclined outside surfaceof the package body 110, respectively. Herein, the 1Bth insulating layer124 extends on the inclined outside surface and a portion of the undersurface of the package body 110. The side of the package body 110 havingthe first insulating layer 120 may be referred to as a first side of thepackage body 110.

In the second insulating layer 121, a 2Ath insulating layer 123 and a2Bth insulating layer 125 are integrally formed on an inclined side ofthe package body 110 in the cavity 111 and an inclined outside surfaceof package body 110 on the other side of the package body 110 from thefirst insulating layer 120. Herein, the 2Bth insulating layer 125extends on the inclined outside surface and a portion of the rearsurface of the package body 110 on the other side of the package body110 from the first insulating layer 120. The side of the package body110 having the second insulating layer 121 may be referred to as asecond side of the package body 110.

The first and second insulating layers 120 and 121 may be integrallyformed at a region other than an open region A1 of the bottom of thecavity 111 and an open region A3 of the rear surface of the package body110, or may be disposed under the first and second metal layers 140 and141.

The wells (or doped regions) 131 to 134 are formed at certain regions ofthe package body 110, respectively. A first well 131 is formed at thefirst side of the package body 110, and a second well 132 is formed atthe second side of the package body 110. A third well 133 is formed atthe cavity 111 of the package body 110, and a fourth well 134 is formedat the rear surface of the package body 110.

The first well 131 is formed in the package body 110 at an open region(or an opening) of the first insulating layer 120, and the second well132 is formed in the package body 110 at an open region (or an opening)of the second insulating layer 121. The first and second wells 131 and132 may be formed by diffusing or injecting impurities into the packagebody 110. The diffused or injected impurities have a polarity that isopposite to the polarity of the package body 110, for example, thepolarity of a silicon substrate. The first and second wells 131 and 132may be realized as (or used in) Zener diodes that are formed in thepackage body 110.

The third well 133 is disposed at the bottom of the cavity 111, and thefourth well 134 is formed at the under surface of the opposite side ofthe third well 133. The third and fourth well 133 and 134 may also beformed by diffusing or injecting the same types of impurities as thefirst and second wells 131 and 132 into the package body 110.

The third well 133 is formed at the package body 110 that is exposed atthe open region A1 of a center portion of the cavity 111, and the fourthwell 134 is formed at the package body 110 that is exposed at the openregion A3 of the rear surface of the package body 110. The third well133 or/and the fourth well 134 is/are electrically insulated from thelight emitting device 150 (i.e., a floating state), and thus may berealized as a constant-current transistor and a Zener diode for otherdevice protection. In embodiments of the invention, the first and secondinsulating layers 120 and 121 may be a single continuous or contiguousinsulating layer that covers the entire surface or most of the surfaceof the package body 110, which may be formed with a conductive substrateor a Wafer Level Package (WLP) using the silicon material. In the singlecontinuous insulating layer, one or more openings may be formed for usein forming the wells (i.e., the doped regions) in the package body 110.

The first and second metal layers 140 and 141 having certain patternsare formed on the first and second insulating layers 120 and 121,respectively. Moreover, the first and second metal layers 140 and 141are electrically insulated from each other, for example, by the openregions A1 and A3 of the package body 110, and are formed at a region ofthe cavity 111 and a portion of each of the top, side and under surfacesof the package body 110. Accordingly, where the first and second metallayers 140 and 141 are divided, an underlying portion of the insulatinglayer (e.g., 120 and 121) may be exposed.

The first and second metal layers 140 and 141 each may be formed as asingle layer or multi-layers of metal by using at least one of copper(Cu), nickel (Ni), gold (Au) and titanium (Ti), but they are not limitedthereto.

The first and second metal layers 140 and 141 may be used as twoelectrode leads, and the number of the leads may be varied according toa metal-layer pattern.

A portion of the first metal layers 140 is formed on the first well 131and thereby is electrically connected to the first well 131. The secondmetal layer 141 is formed on the second well 132 and thereby iselectrically connected to the second well 132.

The light emitting device 150 is mounted within the cavity 111 of thepackage body 110. At least one chip or at least one kind of chip may bemounted on the light emitting device 150. The light emitting device 150is attached to the bottom (i.e., the surface of the package body) of thecavity 111. For example, the light emitting device 150 may be a coloredLED chip such as a blue LED chip, a green LED chip, a red LED chipand/or a yellow LED chip, or may be an ultraviolet (UV) LED chip. Thekind and number of the light emitting device 150, however, are notlimited thereto.

Herein, the light emitting device 150 may be attached onto the thirdwell 133 that is formed at the open region A1 of the cavity 111 of thepackage body 110.

The first and second metal layers 140 and 141 and the light emittingdevice 150 are electrically connected with a plurality wires 152. Thepackage body 110 may be solder-bonded to a base substrate (for example,MOPCB) at the under and side surfaces thereof using Surface MountTechnology (SMT).

Herein, the first and second wells 131 and 132 are connected to thelight emitting device 150 in parallel, or the first and second wells 131and 132 and the light emitting device 150 may be formed as independentdevices, according to the patterns of the first and second metal layers140 and 141.

The third metal plate 145 is formed at the open region A3 of the rearsurface of the package body 110. The third metal plate 145 may be formedof the same material as that of the first and second metal layers 140and 141, or may be formed of another metal material having good heatradiation characteristic. The third metal plate 145 is formed at aregion facing the bottom of the light emitting device 150, for example,under the fourth well 134. The third metal plate 145 radiates heat thatis produced from the light emitting device 150. For this, the thirdmetal plate 145 may be effective for radiating heat when its size isformed to be greater than the contact-surface area of the light emittingdevice 150. The thickness of the third metal plate 145 may be formed toabout 0.5 um to about 100 um, but it is not limited thereto.

As shown in FIG. 1, the light emitting device 150 and the third metalplate 145 are place on opposing surfaces of the package body 110. Thecontact area of the light emitting device 150 on the package body 110 issmaller than a contact area of the third metal plate 145 on the packagebody 110, but is not limited thereto. The light emitting device 150 andthe third metal plate 145 are place on opposing surfaces of a thinnestpart of the package body 110.

The third metal plate 145 and the under surface of the package body 110may be formed on the same plane. The third metal plate 145 is disposedin a structure where it is electrically opened to the first and secondmetal layers 140 and 141.

A resin material 160 is formed at the cavity 111. The resin material 160may be formed of a transparent resin material such as silicon or anepoxy. Moreover, at least one kind of phosphor may be contained to theresin material 160, but it is not limited thereto.

When a power source is attached, and power (e.g., current) is suppliedthrough the first and second metal layers 140 and 141, the lightemitting device 150 receives the power through the wire 152, which isconnected to the first and second metal layers 140 and 141, to emitlight.

When heat is produced by driving of the light emitting device 150, aportion of the heat is conducted to the third metal plate 145 throughthe package body 110 beneath the light emitting device 150, and isthereby radiated. At this point, because the thickness of a region atwhich the third metal plate 145 is formed is thin, the package body 110can effectively conduct heat. The heat is purposely conducted throughthe thin region of the package body 110 to the third metal place 145because the heat transferred to parts of the package body other thanwhere the third metal place 145 is located will not effectively radiatedue to the presence of the insulating layers 120 and 121.

FIGS. 2A and 2B are diagrams respectively illustrating a heat-radiatingpath and a heat-radiating resistor of FIG. 1. Referring to FIGS. 1 and2A, heat produced in the light emitting device 150 is transferredthrough the package body 110 and the third metal plate 145 that aredisposed underneath the light emitting device 150 and is therebyradiated. That is, the heat produced in the light emitting device 150 istransferred through the package body 110 and the third metal plate 145and is thereby radiated to the outside. As illustrated in FIG. 2B, theresistor Rs of the package body 110 and the resistor Rm of the thirdmetal plate 145 are connected as the thermal resistors of thesemiconductor emitting device package. The heat of the light emittingdevice 120 can be quickly radiated by the thermal resistors Rs and Rm.This reduces the number of the thermal resistors Rs and Rm that aredisposed at the vertical down direction of the light emitting device150, and thus a high-efficiency package can be manufactured.Accordingly, the light emitting device 150 stably operates, improvinglight emission efficiency.

FIG. 3 is a circuit diagram illustrating an example of the equivalentcircuit of the light emitting device package in FIG. 1.

Referring to FIG. 3, the light emitting device package includes a lightemitting diode D1 and a Zener diode ZD1. The light emitting diode D1 andthe Zener diode ZD1 may be connected in parallel. First and secondelectrodes P1 and P2 are connected to opposite ends of the lightemitting diode D1 and the Zener diode ZD1, respectively.

Although the Zener diode ZD1 has been disclosed as a bi-directionalZener diode having a bi-directional threshold voltage, a uni-directionalZener diode having a uni-directional threshold voltage may be connectedto the light emitting diode D1 in anti-parallel, and it may beselectively used within the spirit and scope the above-describedtechnology. In embodiments of the invention, anti-parallel orinverse-parallel refers to an arrangement of devices that are connectedin parallel but with their polarities reversed.

FIG. 4 is a circuit diagram illustrating another example of theequivalent circuit of the light emitting device package in FIG. 1.Referring to FIG. 4, the light emitting device package includes a lightemitting diode D1, a first Zener diode ZD1, and a second Zener diodeZD2. The light emitting diode D1 and the first Zener diode ZD1 may beconnected in parallel, and the second Zener diode ZD2 is configured as acircuit that differs from the first Zener diode ZD1. That is, the firstand second wells 131 and 132 in FIG. 1 may be realized as the firstZener diode ZD1, and the third and fourth wells 133 and 134 in FIG. 1may be realized as the second Zener diode ZD2.

FIGS. 5 to 11 are diagrams illustrating a method for manufacturing thelight emitting device package in FIG. 1. Referring to FIG. 5, thepackage body 110 may be formed with a conductive substrate or a WLPusing a silicon material. The cavity 111 having a certain depth isformed at the upper portion of the package body 110.

A mask pattern is formed on and under the package body 110 and thecavity 111 may be formed through an etching process. The etching processmay use a wet etching process or a dry etching process.

The surface of cavity 111 may be formed as a concave base tube shape, aconcave polygonal shape or a concave circular shape, but is not limitedthereto. The side surface of the cavity 111 may be formed to beinclined, to be vertical at certain angle, to be at a certain curvature,or to have a step, for example. The perimeter of the top of the packagebody 110 may be formed to be flat, and the opposite side surfaces of thepackage body 110 may be formed to be bent at a certain angel.

In the package body 110, the region between the cavity 111 and the undersurface of the package body 110 may be formed to a minimum thickness ofthe package body 110. The thickness between the bottom of the cavity 111and the under surface of the package body 110, for example, is about 500um to about 2000 um. The thickness may be altered according to heattransfer efficiency without causing breakage of a silicon wafer (thepackage body 110).

Referring to FIG. 6, an insulating layer 120A is formed on the entiresurface of the package body 110, but is not limited thereto. Theinsulating layer 120A may be formed of at least one of dielectricmaterials, such as silicon thermal oxide, SiC, AlN, alumina and siliconnitride, or may use a dielectric material that is used in a siliconsemiconductor process. When a Zener diode is realized at the packagebody 110, the insulating layer 120A may be used as a silicon thermaloxide.

Referring to FIGS. 6 to 8, a patterning process is performed on theinsulating layer 120A. By forming the open region A1 of the cavity 111and the both-side well open region A2 and rear-surface open region A3 ofthe package body 110 through the patterning process via removal ofportions of the insulating layer 120A, the insulating layer 120A isopened. Accordingly, the insulating layer 120A may be disposed as thefirst and second insulating layers 120 and 121 by the patterningprocess. Herein, the first and second insulating layers 120 and 121 maybe integrally formed or may be disposed in a divided structure.

In the first insulating layer 120, the 1Ath insulating layer 122 and the1Bth insulating layer 124 are integrally formed at the one side (thefirst side) of the cavity 111 of the package body 110 and the one side(the first side) of the body of the package body 110. Herein, the 1Bthinsulating layer 124 is extended to the one-side (the first side)surface of the package body 110 and a portion of the rear surface of thepackage body 110.

In the second insulating layer 121, the 2Ath insulating layer 123 andthe 2Bth insulating layer 125 are integrally formed at the other side(the second side) of the cavity 111 of the package body 110 and theother side (the second side) of the body of the package body 110.Herein, the 2Bth insulating layer 125 is extended to the other-side (thesecond side) surface of the package body 110 and a portion of the undersurface of the package body 110.

The first and second insulating layers 120 and 121 may be integrallyformed at a region other than the open region A1 of the bottom of thecavity 111 and the open region A3 of the rear surface of the packagebody 110, or may be divided in plurality.

Referring to FIGS. 7 and 8, a diffusion process is performed on the openregions A1 to A3 from which the insulating layers 120 and 121 has beenremoved. The diffusion process is a process that diffuses impuritiesinto the package body 110 through the open regions A1 to A3, wherein theimpurities opposite to the polarity of a silicon substrate are injectedor doped. Accordingly, the first to fourth wells (or doped regions) 131to 134 are formed at the package body 110 of the open regions A1 to A3.

The first well 131 is formed at the one-side (the first side) openregion A2 of the package body 110, and the second well 132 is formed atthe other-side (the second side) open region A2 of the package body 110.The third well 133 is formed at the open region A1 of the cavity 111 ofthe package body 110, and the fourth well 134 is formed at therear-surface open region A3 of the package body 110.

The first and second wells 131 and 132 may be realized as Zener diodes,and the third and fourth wells 133 and 134 may be realized as Zenerdiodes for other device protection. The third well 133 or/and the fourthwell 134 is/are electrically insulated from the light emitting device150 (i.e., a floating state), and thus may be realized as aconstant-current transistor and a Zener diode for other deviceprotection.

Referring to FIGS. 8 and 9, a metal forming process is performed. Thefirst and second metal layers 140 and 141 and the third metal plate 145are formed using a mask pattern in a sputtering process or a thin filmdeposition process, but is not limited thereto. The first and secondmetal layers 140 and 141 are formed on the insulating layers 120 and121, and the third metal plate 145 is formed at the under-surface openregion A3 of the package body 110.

The first and second metal layers 140 and 141 are electrically opened,and are extended to the region of the cavity 111 and a portion of theside surface and under surface of the package body 110. The third metalplate 145 may serve as an under-surface heat radiating plate.

Herein, the first and second metal layers 140 and 141 may be used as atleast two electrode leads, and the number of the leads may be variedaccording to a metal-layer pattern.

The first and second metal layers 140 and 141 and the third metal plate145 may be formed in the same process and may be formed as single layersor multi layers by using at least one of Cu, Ni, Au and Ti, but they arenot limited thereto.

The third metal plate 145 is formed under the fourth well 134. Forexample, when the size of the third metal plate 145 is formed to greaterthan the contact-surface area of the light emitting device 150, thethird metal plate 145 may be effective for radiating heat. The thicknessof the third metal plate 145 may be formed to about 0.5 um to about 100um, but it is not limited thereto.

The first and second metal layers 140 and 141 are formed on the firstand second wells 131 and 132, and are electrically connected to thefirst and second wells 131 and 132.

Referring to FIGS. 9 and 10, a process is performed which mounts thelight emitting device 150. The light emitting device 150 is attached inthe cavity 111 of the package body 110. At least one the light emitting150 may be disposed on the third well 133. The light emitting device 150is electrically connected to the first and second metal layers 140 and141 through the plurality of wires 152, but such a connection scheme isnot limited thereto.

The light emitting device 150 may be a colored LED chip such as a blueLED chip, a green LED chip, a red LED chip and/or a yellow LED chip, ormay be realized as an ultraviolet (UV) LED chip. The kind and number ofthe light emitting device 150, however, are not limited thereto.

Herein, the first and second wells 131 and 132 and the light emittingdevice 150 may be formed as a parallel circuit or may be formed asindependent circuits, according to the patterns of the first and secondmetal layers 140 and 141.

Referring to FIGS. 10 and 11, the resin material 160 is formed in thecavity 111. The resin material 160 may be formed of a transparent resinmaterial such as silicon or an epoxy, or at least one kind of phosphormay be contained to the resin material 160. A lens may be formed or isattached on the cavity 111, but is not limited thereto.

The first and second metal layers 140 and 141 may be solder bonded to abase substrate (for example, MOPCB) at the under and side surfaces ofthe package body 110 in SMT.

When heat is produced by driving of the light emitting device 150, aportion of the heat is conducted to the third metal plate 145 throughthe package body 110 and is thereby radiated. At this point, because thethickness of a region at which the third metal plate 145 is formed isthin, the package body 110 can effectively conduct heat.

FIG. 12 is a side-sectional view illustrating a light emitting devicepackage according to a second embodiment. FIGS. 13A and 13B are diagramsrespectively illustrating the heat-radiating path and the heat-radiatingresistor corresponding to the light emitting device package in FIG. 12.In the description of the second embodiment, repetitive description onthe same elements as those of the first embodiment will be omitted andreference will be made to the first embodiment.

Referring to FIG. 12, in a light emitting device package 100A, a fourthmetal plate 147 is formed on the third well 133 of the package body 110,and a third metal plate 145 is formed under the fourth well 134.

Heat radiated from the light emitting device 150, as illustrated in FIG.13A, is radiated along the fourth metal plate 147, the package body 110and the third metal plate 145.

The third and fourth metal plates 145 and 147 are electricallydisconnected from the first and second metal plates 140 and 141. Thesize of the fourth metal plate 145 may be formed to be greater than thecontact-surface area of the light emitting device 150, but is notlimited thereto.

As illustrated in FIG. 13B, in the heat-radiating path of the lightemitting device 150, heat is transferred through the fourth metal plateresistor Rm1, the package body resistor Rs and the third metal plateresistor Rm2. At this point, the fourth metal plate resistor Rm1primarily diffuses and transfers the heat of the light emitting device150.

Accordingly, because heat radiated from the light emitting device 150 iseffectively radiated, the light emitting device 150 can stably operate,thereby improving the reliability of the light emitting device package.

FIG. 14 is a side-sectional view illustrating a light emitting devicepackage according to a third embodiment. FIGS. 15A, 15B and 15C arediagrams respectively illustrating a heat-radiating path, aheat-radiating resistor and a circuit configuration corresponding to thelight emitting device package in FIG. 14. In description of the thirdembodiment, repetitive description on the same elements as those of thefirst embodiment will be omitted and reference will be made to the firstembodiment.

Referring to FIG. 14, a light emitting device package 100B has astructure in which a well (or a doped region) is not formed at thepackage body 110. The light emitting device 150 is attached to the openregion A1 of the bottom of the cavity 111 of the package body 110. Thethird metal plate 145 is formed at an under-surface open region A3.

Referring to FIG. 15A, in the heat-radiating path of the light emittingdevice 150, heat is radiated through the third metal plate 145 via thepackage body 110. Referring to FIG. 15B, a heat-radiating resistor has astructure in which a package body resistor Rs and a third metal plateresistor Rm are connected. Referring to FIG. 15C, because a well is notformed from the package body 110, only a light emitting device D1 isincluded.

FIG. 16 is a side-sectional view illustrating a light emitting devicepackage according to a fourth embodiment. FIGS. 17A, 17B and 17C arediagrams respectively illustrating a heat-radiating path, aheat-radiating resistor and a circuit configuration corresponding to thelight emitting device package in FIG. 16. In description of the fourthembodiment, repetitive description on the same elements as those of thethird embodiment will be omitted and reference will be made to the thirdembodiment.

Referring to FIG. 16, in a light emitting device package 100C, a fourthmetal plate 137 is disposed under a light emitting device 150 and isdisposed at the bottom of the cavity 111 of the package body 110. Athird metal plate 145 is disposed at the under-surface open region A3 ofthe package body 110.

Referring to FIG. 17A, in a heat-radiating path, heat produced from thelight emitting device 150 is radiated through the fourth metal plate137, the package body 110 and the third metal plate 145. Referring toFIG. 17B, a heat-radiating resistor includes a fourth metal plateresistor Rm1, a package body resistor Rs and a third metal plateresistor Rm2. The heat is conducted through the heat-radiating resistorsRm1, Rs and Rm2. Referring to FIG. 17C, the light emitting devicepackage is configured with a circuit including a light emitting diodeD1.

According to embodiments of the invention, a metal plate or/and a wellis/are disposed at the cavity 111 of the package body 110, and a metalplate or/and a well is/are disposed at a surface opposite to this.Accordingly, radiant heat can be induced by the minimum number ofresistors, and a protection device can be manufactured.

According to embodiments of the invention, the heat-transferring path ofthe light emitting device is improved in the semiconductor emittingdevice package, improving the light emission efficiency of the lightemitting device.

According to embodiments of the invention, the light emitting device canbe protected from an abnormal power source.

According to embodiments of the invention, heat radiation efficiency canimprove by about 5% to about 20% in the semiconductor emitting devicepackage.

According to embodiments of the invention, the reliability of thesemiconductor emitting device package can improve.

An embodiment of the invention provides a method for manufacturing alight emitting device package including forming a cavity at a packagebody; forming an insulating layer at a surface of the package body;forming a plurality of metal layers on the insulating layer; forming ametal plate under the package body; attaching a light emitting device onthe package body in the cavity; and electrically connecting the lightemitting device to the metal layers.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device package, comprising: abody comprising a cavity at an upper portion; first and second metallayers in the cavity of the body; an open area recessed in the cavityand disposed between the first and second metal layers; a first metalplate disposed in the open area and spaced apart from the first andsecond metal layers; a semiconductor device disposed on the first metalplate and electrically connected to at least one of the first and thesecond metal layers; a resin material in the cavity; and a second metalplate disposed under a bottom surface of the body, wherein the firstmetal plate is disposed between the body and the semiconductor device,and between the first and second metal layers, wherein a first portionof the body is disposed between the first metal plate and the secondmetal plate, and wherein the second metal plate has a horizontal widthsmaller than a horizontal width of the body and is vertically overlappedwith the first and second metal layers disposed in the cavity.
 2. Thelight emitting device package according to claim 1, wherein the secondmetal plate is disposed at a region facing a bottom of the semiconductordevice.
 3. The light emitting device package according to claim 2,wherein the second metal plate is disposed at the region facing thefirst metal plate which has the horizontal width small than a horizontalwidth of the open area.
 4. The light emitting device package accordingto claim 3, wherein the second metal plate is formed of a same materialas that of the first and second metal layers.
 5. The light emittingdevice package according to claim 2, wherein the second metal plate hasa size greater than that of the bottom of the semiconductor device. 6.The light emitting device package according to claim 3, wherein thesecond metal plate is spaced apart from the first and second metallayers and has a thickness thicker than a thickness of the first metalplate.
 7. The light emitting device package according to claim 1,wherein the first metal plate is directly contacted with thesemiconductor device and a bottom surface of the open area.
 8. The lightemitting device package according to claim 1, wherein the open areaincludes a bottom surface lower than an upper surface of the first andsecond metal layers which are disposed in the cavity.
 9. The lightemitting device package according to claim 8, wherein the first metalplate has an upper surface lower than the upper surface of the first andsecond metal layers which are disposed in the cavity.
 10. The lightemitting device package according to claim 1, wherein the open area hasa width smaller than that of the bottom surface of the cavity.
 11. Thelight emitting device package according to claim 1, wherein a portion ofthe resin material is disposed in the open area and is disposed aroundthe first metal plate.
 12. The light emitting device package accordingto claim 11, wherein the resin material is physically contacted with alateral surface of the first metal plate.
 13. The light emitting devicepackage according to claim 12, wherein the resin material is physicallycontacted with a bottom surface of the open area.
 14. The light emittingdevice package according to claim 1, wherein the semiconductor device isembedded in the open area and is connected to the first and second metallayers by a wire.
 15. The light emitting device package according toclaim 3, wherein the first metal plate has substantially the same widthas the bottom of the semiconductor device.
 16. The light emitting devicepackage according to claim 1, further comprising a third metal layerconnected to the first metal layer and a fourth metal layer connected tothe second metal layer, wherein the third and fourth metal layers aredisposed under the bottom surface of the body.
 17. The light emittingdevice package according to claim 16, wherein the second metal plate hasa thickness thicker than a thickness of the third and fourth metallayers.
 18. The light emitting device package according to claim 1,wherein the second metal plate is disposed between the third metal layerand the fourth metal layer.
 19. The light emitting device packageaccording to claim 1, wherein the first and second metal plates areelectrically disconnected to the first and second metal layers, andwherein the first metal plate has a thickness thinner than a thicknessof the second metal plate.